Doping in Iii-V Semiconductors - Engineerin

Klappentext This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Zusammenfassung This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The various techniques and the key characteristics of dopants that are employed in III–V semiconductors are presented. Inhaltsverzeichnis 1. Shallow impurities; 2. Phenomenology of deep levels; 3. Semiconductor statistics; 4. Growth technologies; 5. Doping with elemental sources; 6. Gaseous doping sources; 7. Impurity characteristics; 8. Redistribution of impurities; 9. Deep centers; 10. Doping in heterostructures, quantum wells, and superlattices; 11. Delta doping; 12. Characterization technique.

Product details

• Authors: E. F. Schubert, E. F. (At&t Bell Laboratories Schubert
• Assisted by: Haroon Ahmad (Editor), Michael Pepper (Editor)
• Publisher: Cambridge University Press ELT
• Languages: English
• Product format: Paperback / Softback
• Released: 22.08.2005
• EAN: 9780521017848
• ISBN: 978-0-521-01784-8
• No. of pages: 632
• Series: Cambridge Studies in Semicondu
• Subjects: Natural sciences, medicine, IT, technology > Physics, astronomy > General, dictionaries; Non-fiction book > Nature, technology > Astronomy: general, reference works