Molecular Beam Epitaxy - Fundamentals and Current Status

This first-ever monograph on molecular beam epitaxy (MBE) gives a comprehensive presentation of recent developments in MBE, as applied to crystallization of thin films and device structures of different semiconductor materials. MBE is a high-vacuum technology characterized by relatively low growth temperature, ability to cease or initiate growth abruptly, smoothing of grown surfaces and interfaces on an atomic scale, and the unique facility for in situ analysis of the structural parameters of the growing film. The excellent exploitation parameters of such MBE-produced devices as quantum-well lasers, high electron mobility transistors, and superlattice avalanche photodiodes have caused this technology to be intensively developed. The main text of the book is divided into three parts. The first presents and discusses the more important problems concerning MBE equipment.

List of contents

Contents: Background Information.- Technological Equipment.- Characterization Methods.- MBE Growth Processes.- Conclusion.- References.- Subject Index.

Product details

• Authors: Marian A. Herman, Helmut Sitter
• Publisher: Springer, Berlin
• Languages: English
• Product format: Hardback
• Released: 01.01.1996
• EAN: 9783540605942
• ISBN: 978-3-540-60594-2
• No. of pages: 453
• Weight: 840 g
• Illustrations: w. 260 figs. (some col.)
• Series: Springer Series in Materials Science
• Subject: Natural sciences, medicine, IT, technology > Technology > Electronics, electrical engineering, communications engineering