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The book presents the first unified treatment of hybride source MBE and metalorganic MBE that includes: detailed descriptions of the beam epitaxy apparatus and its use, simplified thermodynamic and chemical treatments of both reactions in the beam source and the crystal growth, and details of doping behavior, particularly redistribution during growth, and the achievement of very high doping levels. These are essential for design and growth of structures with complex doping profiles. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. The chapters on the properties of heterostructures and devices illustrate in detail the use of such analytical methods as high-resolution X-ray diffraction, secondary ion mass spectroscopy, several photoluminescene methods, and the use of active devices for materials evaluation.
List of contents
Summary of the Contents:
Chemistry
The Generation of Atomic and Molecular Beams for Elemental and Gas Source Molecular Beam Epitaxy
Molecular Beam Epitaxy Systems and Procedures
Doping During GSMBE
Characterization of Heterostructures by High Resolution X-ray Diffraction
Optical Properties of Quantum Wells
Carrier Transport AcrossQuantum Wells and Superlattices
Bipolar Transistors
Optoelectronic Devices
In-Situ Processing and Selektive Area Epitaxy.
