Fr. 185.00

Secondary Ion Mass Spectrometry - An Introduction to Principles and Practices

English · Hardback

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Serves as a practical reference for those involved in Secondary Ion Mass Spectrometry (SIMS)
* Introduces SIMS along with the highly diverse fields (Chemistry, Physics, Geology and Biology) to it is applied using up to date illustrations
* Introduces the accepted fundamentals and pertinent models associated with elemental and molecular sputtering and ion emission
* Covers the theory and modes of operation of the instrumentation used in the various forms of SIMS (Static vs Dynamic vs Cluster ion SIMS)
* Details how data collection/processing can be carried out, with an emphasis placed on how to recognize and avoid commonly occurring analysis induced distortions
* Presented as concisely as believed possible with All sections prepared such that they can be read independently of each other

List of contents

Foreword xi
Preface xiii
Acknowledgments xvi
List of Constants xvii
1 Introduction 1
1.1 Matter and The Mass Spectrometer 1
1.2 Secondary Ion Mass Spectrometry 4
1.2.1 History 6
1.2.2 Physical Basis 8
1.2.2.1 Sensitivity and Detection Limits 9
1.2.3 Application Fields 12
1.3 Summary 18
SECTION I PRINCIPLES 21
2 Properties of Atoms, Ions, Molecules, and Solids 23
2.1 The Atom 23
2.1.1 Atomic Structure 23
2.1.1.1 Atomic Mass 25
2.1.1.2 Atomic Density 27
2.2 Electronic Structure of Atoms and Ions 27
2.2.1 Stationary States 28
2.2.1.1 Quantum Numbers 28
2.2.1.2 Spectroscopic and X-ray Notation 29
2.2.1.3 Ionization Potential and Electron Affinity 31
2.2.2 Bonding and the Resulting Properties of Solids 32
2.2.2.1 Bands and the Density of States 34
2.2.2.2 Work Function 35
2.2.2.3 Image Field 36
2.2.2.4 Electronic Excitation 36
2.3 Summary 42
3 Sputtering and Ion Formation 44
3.1 The Fundamentals of SIMS 44
3.1.1 Secondary Ion Generation 45
3.2 Sputtering 46
3.2.1 Sputtering by Ion Impact 47
3.2.1.1 Linear Cascade Model 50
3.2.1.2 Other Sputtering Models 54
3.2.1.3 Simulations 60
3.2.2 Sputter Rates and Sputter Yields 67
3.2.2.1 Sputter Yield Dependence on Primary Ion Conditions 69
3.2.2.2 Sputter Yield Dependence on Substrate 76
3.2.3 Sputter-induced damage 81
3.2.3.1 Recoil Implantation, Cascade Mixing, Diffusion, and Segregation 83
3.2.3.2 Substrate Amorphization and Re-crystallization 85
3.2.3.3 Surface Roughening and Surface Smoothing 86
3.3 Ionization/Neutralization 88
3.3.1 Ion-Solid Interactions 90
3.3.2 Secondary Ion Yields 93
3.3.2.1 Ionization Potential and Electron Affinity 95
3.3.2.2 Matrix Effects 97
3.3.2.3 Electronic Excitation 113
3.3.3 Models for Atomic Secondary Ions 121
3.3.3.1 LTE Formalism 123
3.3.3.2 Bond Breaking Model 124
3.3.3.3 Kinetic Emission Model 129
3.3.4 Models for Molecular Secondary Ions 130
3.3.4.1 Models for Molecular Ion Emission in SIMS 132
3.3.4.2 Models for Molecular Ion Emission in MALDI 135
3.4 Summary 138
SECTION II PRACTICES 145
4 Instrumentation Used in SIMS 147
4.1 The Science of Measurement 147
4.1.1 SIMS in its various forms 148
4.1.1.1 Static SIMS 148
4.1.1.2 Dynamic SIMS 149
4.1.1.3 Cluster Ion SIMS 150
4.2 Hardware 151
4.2.1 Vacuum 152
4.2.1.1 Vacuum and the Kinetic Theory of Gases 153
4.2.1.2 Pumping Systems 156
4.2.2 Primary Ion Columns 159
4.2.2.1 Ion Sources 161
4.2.3 Secondary Ion Columns 167
4.2.3.1 Mass Filters 170
4.2.3.2 Energy Filters 182
4.2.3.3 Detectors 184
4.3 Summary 191
5 Data Collection and Processing 195
5.1 The Art of Measurement 195
5.1.1 Data Formats and Definitions 196
5.1.1.1 Mass Spectra 197
5.1.1.2 Depth Profiling 201
5.1.1.3 Imaging 204
5.2 Sample Preparation and Handling 208
5.2.1 Preparation in the Materials Sciences 209
5.2.2 Preparation in the Earth Sciences 210
5.2.3 Preparation in the Biosciences 212
5.2.4 Sample Handling 213
5.3 Data Collection 215
5.3.1 Secondary Ion Mass, Energy, and Intensity Scales 216
5.3.1.1 Referencing the Mass, Energy, and Intensity Scales 216
5.3.1.2 Charge Buildup 218
5.3.1.3 Isobaric Interferences 221
5.3.2 Instrument Operation Modes 225
5.3.2.1 Primary Ion Beam Operation Modes 225
5.3.2.2 Secondary Ion Imaging Modes 231
5.3.2.3 The O2 Leak Methodology 233
5.3.2.4 Depth Profiling and Related Aspects 234
5.4 Data Processing 248
5.4.1 Spectral Identification 249
5.4.1.1 Atomic and Unfragmented Molecular Emissions 249
5.4.1.2 Heavily Fragmented Molecular Emissions 250
5.4.2 Quantification of the Depth Scale 251
5.4.2.1 Ex situ Methods 254
5.4.2.2 In situ Methods 256
5.4.3 Quantification of the Concentration Scale 259
5.4.3.1 The RSF Method 260
5.4.3.2 Fabrication of Reference Materials 265
5.5 Summary 268
A

About the author










Paul van der Heide is a recognized leader in surface analysis with emphasis on the application of Secondary Ion Mass Spectrometry (SIMS). This interest started during his PhD (completed in 1992 at the University of Auckland) which involved the design and construction of a magnetic sector SIMS instrument. Paul has since been heavily involved in the application and development of SIMS at the University of Western Ontario, the University of Houston (where he also filled in various Professor level positions), Samsung Austin Semiconductor, and most recently at GlobalFoundries (NY). Paul has ~100 publications with this representing his 2nd book.   

Summary

This book serves as a practical reference for anyone involved in any form of Secondary Ion Mass Spectrometry (SIMS). This is presented in a concise yet comprehensive manner to those wanting to know more about the technique in general as opposed to advanced sample specific procedures/applications.

Report

"It is well worth owning if you want to learn about this exciting surface science technique for studying materials." ( IEEE Electrical Engineering magazine , 1 May 2015)

"The entire book, and especially the second part, is a good reference work for users of D-SIMS and S-SIMS and for those working in other methods in analytical chemistry and the applied scientific fields, including the biosciences, where SIMS is now becoming a major experimental method." ( Anal Bioanal Chem , 21 February 2015)

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