Microscopy of Semiconducting Materials 1

Informationen zum Autor A. G. Cullis (Author) , S. M. Davidson (Edited by) , G. R. Booker (Edited by) Klappentext This volume contains invited and contributed papers at the conference on Microscopy of Semiconducting Materials which took place on 21-23 March 1983 in St Cathernine's College, Oxford. The conference was the third in the series devoted to advances in microscopical studies of semiconductors. Zusammenfassung This volume contains invited and contributed papers at the conference on Microscopy of Semiconducting Materials which took place on 21–23 March 1983 in St Cathernine's College, Oxford. The conference was the third in the series devoted to advances in microscopical studies of semiconductors. Inhaltsverzeichnis Section 1 Structure and properties of dislocations, Section 2 High resolution microscopy, Section 3 Transient annealing phenomena, Section 4 Silicon characterisation, Section 5 Compund semiconductor characterization, Section 6 Scanning EBIC and CL, Section 7 X-ray techniques, Section 8 Non-conventional microscopy, Section 9 Device assement by scanning microscopy, Section 10 Device assessment by transmisison microscopy.

Product details

• Authors: Cullis, Cullis, A. G. Cullis, A.G. Cullis, S. M. Davidson
• Assisted by: G R Booker (Editor), A G Cullis (Editor), A. G. Cullis (Editor), S M Davidson (Editor)
• Publisher: External catalogues UK
• Languages: English
• Product format: Hardback
• Released: 24.11.2009
• EAN: 9780854981588
• ISBN: 978-0-85498-158-8
• Series: Institute of Physics Conferenc; Institute of Physics Conferenc
• Subjects: Natural sciences, medicine, IT, technology > Technology > Miscellaneous; SCIENCE / Chemistry / Analytic, Materials science, Spectrum analysis, spectrochemistry, mass spectrometry, TECHNOLOGY & ENGINEERING / Materials Science / General