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Electrical and Optical Properties of Semiconductors

English · Paperback / Softback

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Radiative Recombination at Dislocations in Germanium.- I. Experimental Method.- II. Radiative Recombination in Germanium Crystals with Dislocation Densities of 103104 cm-2.- III. Radiative Recombination in Germanium Crystals with High (105-106 cm-2) Dislocation Densities. Radiative Recombination Mechanism.- IV. Determination of the Quantum Yield of the Recombination Radiation Associated with Dislocations.- Conclusions.- Literature Cited.- Impact Ionization of Impurities in Germanium at Low Temperatures.- I. Impact Ionization (Review).- II. Experimental Technique.- III. Results of Measurements and Discussion.- IV. Breakdown.- V. Influence of a Magnetic Field on the Electrical Conductivity of Germanium in Prebreakdown and Breakdown Fields.- VI. Electrical Conductivity of Germanium in Fields Higher than the Breakdown Value.- VII. Electrical Discharge in Very Thin Germanium Layers at Low Temperatures.- Appendix. Electrical Conductivity of Zinc-Doped Germanium.- Literature Cited.- Investigation of the Infrared Absorption Spectrum of Neutron-Irradiated Silicon.- I. Effects of Radiations on a Semiconducting Crystal. Review of the Main Papers on Radiation Defects in Silicon.- II. Experimental Method.- III. Experimental Results and Discussion.- Conclusions.- Literature Cited.- Electrical and Optical Properties of Electroluminescent Capacitors Based on ZnS:Cu.- I. Principal Mechanism of Electroluminescence.- II. Experimental Method.- III. Frequency Characteristics of an Electroluminescent Capacitor.- IV. Dependence of the Characteristics of an Electroluminescent Capacitor on Voltage.- V. Rectification of the Current by an Electroluminescent Capacitor.- Conclusions.- Literature Cited.

List of contents

Radiative Recombination at Dislocations in Germanium.- I. Experimental Method.- II. Radiative Recombination in Germanium Crystals with Dislocation Densities of 103104 cm-2.- III. Radiative Recombination in Germanium Crystals with High (105-106 cm-2) Dislocation Densities. Radiative Recombination Mechanism.- IV. Determination of the Quantum Yield of the Recombination Radiation Associated with Dislocations.- Conclusions.- Literature Cited.- Impact Ionization of Impurities in Germanium at Low Temperatures.- I. Impact Ionization (Review).- II. Experimental Technique.- III. Results of Measurements and Discussion.- IV. Breakdown.- V. Influence of a Magnetic Field on the Electrical Conductivity of Germanium in Prebreakdown and Breakdown Fields.- VI. Electrical Conductivity of Germanium in Fields Higher than the Breakdown Value.- VII. Electrical Discharge in Very Thin Germanium Layers at Low Temperatures.- Appendix. Electrical Conductivity of Zinc-Doped Germanium.- Literature Cited.- Investigation of the Infrared Absorption Spectrum of Neutron-Irradiated Silicon.- I. Effects of Radiations on a Semiconducting Crystal. Review of the Main Papers on Radiation Defects in Silicon.- II. Experimental Method.- III. Experimental Results and Discussion.- Conclusions.- Literature Cited.- Electrical and Optical Properties of Electroluminescent Capacitors Based on ZnS:Cu.- I. Principal Mechanism of Electroluminescence.- II. Experimental Method.- III. Frequency Characteristics of an Electroluminescent Capacitor.- IV. Dependence of the Characteristics of an Electroluminescent Capacitor on Voltage.- V. Rectification of the Current by an Electroluminescent Capacitor.- Conclusions.- Literature Cited.

Product details

Assisted by D. V. Skobel Tsyn (Editor), D. V. Skobel'tsyn (Editor), V Skobel tsyn (Editor), D V Skobel tsyn (Editor)
Publisher Springer, Berlin
 
Languages English
Product format Paperback / Softback
Released 16.10.2013
 
EAN 9781461585541
ISBN 978-1-4615-8554-1
No. of pages 196
Illustrations VII, 196 p.
Series The Lebedev Physics Institute Series
The Lebedev Physics Institute Series
Subject Natural sciences, medicine, IT, technology > Physics, astronomy > Electricity, magnetism, optics

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