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The Drift Diffusion Equation and Its Applications in MOSFET Modeling

English · Hardback

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The drift diffusion equation has proved to be very powerful to describe charge transport in devices even with feature sizes entering the deep submicron region. It allows, in a very natural way, the unification of the important physical phenomena and the complex geometries into a mathematical code. The physics is phenomenologically described and it is of considerable interest to find its underlying microscopic description. The Drift Diffusion Equation and Its Applications in MOSFET Modeling will bridge this gap between phenomenological modeling and a rigorous microscopic approach. It focusses primarily on MOSFET related features. The book is organized in five chapters which cover the rigorous derivation of the Boltzmann equation from non-equilibrium quantum mechanics in Chapter I to a semi-empirical formulation of MOSFET degradation in Chapter V. It aims for a physical understanding of successfully used concepts in modeling.
For instance a detailed account of the bulk and surface mobility in an electron phonon impurity system is given. In Chapter II the implications of the relaxation time approximation are discussed in very detail and the hydrodynamic equations for the case of strong nonequilibrium are developed. Especially the problem of a self-consistent closure and how velocity overshoot can be included in an extended drift diffusion equation is addressed. In Chapter IV analytical approaches to determine the high energy distribution of carriers in high electric fields are treated. The result of this chapter is a self-consistent formulation of impact ionisation and oxide injection which serves as an important input for Chapter V where we study the spatial and temporal built up of charges in the gate oxide of a MOSFET device under electrical stress.
Die Drift-Diffusions-Gleichung hat sich als sehr aussagekräftig in der Beschreibung des Ladungstransports in mikroelektronischen Bauteilen erwiesen. Sie ermöglicht auf sehr anschauliche Weise die Umsetzung der wichtigsten physikalischen Phänomene und komplexen Geometrien in einen mathematischen Code. Das Buch führt den Leser in das Reich der Modellierung ein und bringt ihm die theoretischen Konzepte des Ladungstransportes näher.

Product details

Authors Wilfried Hänsch
Publisher Springer, Wien
 
Languages English
Product format Hardback
Released 01.01.1991
 
EAN 9783211822227
ISBN 978-3-211-82222-7
No. of pages 271
Weight 666 g
Illustrations w. figs.
Series Computational Microelectronics

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