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Informationen zum Autor The three coeditors, Dr. Cole W. Litton, Dr. Donald C. Reynolds and Dr. Thomas C. Collins, are internationally recognized experts in field of the physics of semiconductors, with an emphasis on the optical, electrical and structural properties and crystal growth of these materials, especially zinc oxide and the other Group II-VI semiconductor materials, as well as the III-V compound semiconductor materials and their electronic and optoelectronic devices. Each of the editors has authored more than 500 scientific/technical papers, book chapters, and technical/scientific books over professional careers that have spanned much of the past 30 to 40 years. Klappentext Zinc Oxide (ZnO) powder has been widely used as a white paint pigment and industrial processing chemical for nearly 150 years. However, following a rediscovery of ZnO and its potential applications in the 1950s, science and industry alike began to realize that ZnO had many interesting novel properties that were worthy of further investigation. ZnO is a leading candidate for the next generation of electronics, and its biocompatibility makes it viable for medical devices. This book covers recent advances including crystal growth, processing and doping and also discusses the problems and issues that seem to be impeding the commercialization of devices. Topics include: Energy band structure and spintronics Fundamental optical and electronic properties Electronic contacts of ZnO Growth of ZnO crystals and substrates Ultraviolet photodetectors ZnO quantum wells Zinc Oxide Materials for Electronic and Optoelectronic Device Applications is ideal for university, government, and industrial research and development laboratories, particularly those engaged in ZnO and related materials research. Zusammenfassung Zinc Oxide (ZnO) powder has been widely used as a white paint pigment and industrial processing chemical for nearly 150 years. However, following a rediscovery of ZnO and its potential applications in the 1950s, science and industry alike began to realize that ZnO had many interesting novel properties that were worthy of further investigation. Inhaltsverzeichnis Series Preface xv Preface vii List of Contributors xxi 1 Fundamental Properties of ZnO 1 T. C. Collins and R. J. Hauenstein 1.1 Introduction 1 1.1.1 Overview 1 1.1.2 Organization of Chapter 2 1.2 Band Structure 2 1.2.1 Valence and Conduction Bands 2 1.3 Optical Properties 5 1.3.1 Free and Bound Excitons 5 1.3.2 Effects of External Magnetic Field on ZnO Excitons 6 1.3.3 Strain Field 8 1.3.4 Spatial Resonance Dispersion 9 1.4 Electrical Properties 10 1.4.1 Intrinsic Electronic Transport Properties 10 1.4.2 n-type Doping and Donor Levels 11 1.4.3 p-type Doping and Dopability 13 1.4.4 Schottky Barriers and Ohmic Contacts 17 1.5 Band Gap Engineering 19 1.5.1 Homovalent Heterostructures 20 1.5.2 Heterovalent Heterostructures 22 1.6 Spintronics 22 1.7 Summary 25 References 25 2 Optical Properties of ZnO 29 D. C. Reynolds, C. W. Litton and T. C. Collins 2.1 Introduction 29 2.2 Free Excitons 29 2.3 Strain Splitting of the ¿5 and ¿6 Free Excitons in ZnO 35 2.4 Photoluminescence from the Two Polar Faces of ZnO 36 2.5 Bound-Exciton Complexes in ZnO 38 2.6 Similarities in the Photoluminescence Mechanisms of ZnO and GaN 46 2.7 The Combined Effects of Screening and Band Gap Renormalization on the Energy of Optical Transitions in ZnO and GaN 51 2.8 Closely Spaced Donor-Acceptor Pairs in ZnO 55 2.9 Summary 58 References 58 3 Electrical Transport Properties in Zinc Oxide 61 B. Claflin and D. C. Look 3.1 Introduction 61
