Read more
Symposium 'Computational Semiconductor Materials Science', MRS Spring Meeting 2011, focused on theoretical and computational aspects of semiconductor materials and devices.
List of contents
Part I. Defects in Semiconductors: 1. Electronic structure of O-vacancy in high-kappa dielectrics and oxide semiconductors Kee Joo Chang; 2. First principles predictions of intrinsic defects in aluminum arsenide, AlAs Peter Schultz; Part II. Method of Electronic Structure Calculations: 3. The absorption of diamondoids from time-dependent density functional calculations Marton Voros; 4. Second-harmonic generation spectroscopy from time-dependent density-functional theory Eleonora Luppi; Part III. Low-Dimensional Materials: 5. Electronic structure and optical absorption of fluorographene Li Yang; 6. Multiscale modeling of a quantum dot heterostructure Parijat Sengupta; Part IV. Semiconducting Energy Materials: 7. Structural, electronic and defect properties of Cu2ZnSn(S,Se)4 alloys Xin-Gao Gong; Part V. Magnetic Semiconductors: 8. Magnetic properties of polar ZnO surfaces from ab-initio calculations Guntram Fischer; Part VI. Phase Change Materials, Surfaces, and Interfaces: 9. Electronic excitation induced solid-state amorphization in Ge-Sb-Te alloy Shengbai Zhang; 10. Defect-free and defective surfaces of the pyrochlore oxide La2Zr2O7: a theoretical study Yves Mantz; 11. First principles analysis of ultra-thin silicon films with dimer structures Eiji Kamiyama; Part VII. Poster Session: 12. Ferromagnetism in undoped semiconductors Ying Dai; 13. Effects of direct lateral current injection on the performance, overall efficiency and emission distribution in GaN LED structures: a 2D computational study Pyry Kivisaari; 14. Density-functional theory study of hydrogen induced platelets in silicon Jean-Paul Crocombette; 15. Temperature induced evolution of bond-centered hydrogen (BCH) defects in crystalline silicon: dynamical, electronic, vibrational and optical signatures Anatoli Shkrebtii; 16. Temperature dependent optical response of Si(100): theory vs. experiment Anatoli Shkrebtii; 17. Electronic structure calculations using a modified Thomas-Fermi approximation Michael Tilton; 18. Electron position: jumping in double concentric quantum rings Igor Filikhin.
