Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

List of contents

Part I. Novel Devices; Part II. Ge MOSFET; Part III. Poster Session; Part IV. III-V MOSFET; Part V. Novel Devices and III-V MOSFET; Part VI. Materials and Devices for beyond CMOS Scaling; Author index; Subject index.

Summary

This proceedings volume contains papers presented at Symposium I, 'Materials for End-of-Roadmap Scaling of CMOS Devices', and Symposium J, 'Materials and Devices for Beyond CMOS Scaling', held April 5–9 at the 2010 MRS Spring Meeting in San Francisco, California. These symposia attracted 106 presentations, of which twenty-two were invited.

Product details

• Assisted by: C. Bonafos (Editor), Caroline Bonafos (Editor), P. Dimitrakis (Editor), Y. Fujisaki (Editor), Yoshihisa Fujisaki (Editor), Supratik Guha (Editor), Andrew C. Kummel (Editor), Prashant Majhi (Editor), Jochen Mannhart (Editor), Shriram Ramanathan (Editor), Iain Thayne (Editor), Heiji Watanabe (Editor)
• Publisher: Cambridge University Press
• Languages: English
• Product format: Hardback
• Released: 27.12.2010
• EAN: 9781605112299
• ISBN: 978-1-60511-229-9
• No. of pages: 162
• Dimensions: 157 mm x 235 mm x 14 mm
• Weight: 395 g
• Series: MRS Proceedings; MRS Proceedings
• Subject: Natural sciences, medicine, IT, technology > Technology > Miscellaneous