Doping Engineering for Front-End Processing

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

List of contents

Preface; Part I. Ultra Shallow Junctions I; Part II. Shallow Junction Contacting; Part III. Poster Session; Part IV. Ultra Shallow Junctions II; Part V. Solid Phase Epitaxial Regrowth; Part VI. Modeling and Simulation; Author index; Subject index.

Summary

The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.

Product details

• Assisted by: M. Law (Editor), M. (University of Florida) Law (Editor), B. J. Pawlak (Editor), M. L. Pelaz (Editor), M. L. (Universidad de Valladolid Pelaz (Editor), K. Surugo (Editor)
• Publisher: Cambridge University Press
• Languages: English
• Product format: Hardback
• Released: 17.10.2008
• EAN: 9781605110400
• ISBN: 978-1-60511-040-0
• No. of pages: 336
• Dimensions: 157 mm x 235 mm x 23 mm
• Weight: 638 g
• Series: MRS Proceedings; Materials Research Society Sym
• Subject: Natural sciences, medicine, IT, technology > Technology > Miscellaneous