Silicon Carbide 2008 - Materials, Processing and Devices

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

List of contents

Part I. Bulk Material and Characterization; Part II. Epitaxial Material and Characterization; Part III. Device Processing and Characterization; Author index; Subject index.

Summary

Silicon carbide (SiC) is a robust semiconductor material being actively developed for high-power and high-temperature applications, especially in the field of power electronics and sensors for harsh environments. This book, the fifth in a continuing series, focuses on SiC growth, defects, and devices.

Product details

• Assisted by: Michael Dudley (Editor), C. Mark Johnson (Editor), M. Law (Editor), B. J. Pawlak (Editor), M. L. Pelaz (Editor), Adrian R. Powell (Editor)
• Publisher: Cambridge University Press
• Languages: English
• Product format: Hardback
• Released: 31.07.2008
• EAN: 9781605110394
• ISBN: 978-1-60511-039-4
• No. of pages: 300
• Dimensions: 157 mm x 235 mm x 21 mm
• Weight: 588 g
• Series: Materials Research Society Sym
• Subject: Natural sciences, medicine, IT, technology > Technology > Miscellaneous