Single Event Effects in Aerospace

Informationen zum Autor EDWARD PETERSEN , PhD, worked for the Naval Research Laboratory from 1969 to 1993. Since then, he has served as a consultant. Dr. Petersen's research has focused on estimating upset rates for satellite systems. His work has shown that measurements of space upset rates are consistent with predictions based on laboratory experiments. He has authored or coauthored sixty papers on radiation effects, the majority dealing with single event effects. An IEEE Fellow, Dr. Petersen was the recipient of the IEEE Nuclear and Plasma Sciences Society Radiation Effects Award. Klappentext Enables readers to better understand, calculate, and manage single event effects Single event effects, caused by single ionizing particles that penetrate sensitive nodes within an electronic device, can lead to anything from annoying system responses to catastrophic system failures. As electronic components continue to become smaller and smaller due to advances in miniaturization, electronic components designed for avionics are increasingly susceptible to these single event phenomena. With this book in hand, readers learn the core concepts needed to understand, predict, and manage disruptive and potentially damaging single event effects. Setting the foundation, the book begins with a discussion of the radiation environments in space and in the atmosphere. Next, the book draws together and analyzes some thirty years of findings and best practices reported in the literature, exploring such critical topics as: Design of heavy ion and proton experiments to optimize the data needed for single event predictions Data qualification and analysis, including multiple bit upset and parametric studies of device sensitivity Pros and cons of different approaches to heavy ion, proton, and neutron rate predictions Results of experiments that have tested space predictions Single Event Effects in Aerospace is recommended for engineers who design or fabricate parts, subsystems, or systems used in avionics, missile, or satellite applications. It not only provides them with a current understanding of single event effects, it also enables them to predict single event rates in aerospace environments in order to make needed design adjustments. Zusammenfassung This book introduces the basic concepts necessary to understand Single Event phenomena which could cause random performance errors and catastrophic failures to electronics devices. As miniaturization of electronics components advances, electronics components are more susceptible in the radiation environment. Inhaltsverzeichnis 1. Introduction 1 1.1 Background 1 1.2 Analysis of Single Event Experiments 7 1.2.1 Analysis of Data Integrity and Initial Data Corrections 7 1.2.2 Analysis of Charge Collection Experiments 7 1.2.3 Analysis of Device Characteristics from Cross-Section Data 7 1.2.4 Analysis of Parametric Studies of Device Sensitivity 8 1.3 Modeling Space and Avionics See Rates 8 1.3.1 Modeling the Radiation Environment at the Device 8 1.3.2 Modeling the Charge Collection at the Device 9 1.3.3 Modeling the Electrical Characteristic and Circuit Sensitivity for Upset 9 1.4 Overview of this Book 10 1.5 Scope of this Book 11 2. Foundations of Single Event Analysis and Prediction 13 2.1 Overview of Single Particle Effects 13 2.2 Particle Energy Deposition 15 2.3 Single Event Environments 18 2.3.1 The Solar Wind and the Solar Cycle 19 2.3.2 The Magnetosphere Cosmic Ray and Trapped Particle Motion 22 2.3.3 Galactic Cosmic Rays 24 2.3.4 Protons Trapped by the Earth's Magnetic Fields 42 2.3.5 Solar Events 46 2.3.6 Ionization in the Atmosphere 48 2.4 Charge Collection and Upset 58 2.5 Effective Let 60 2.6 ...

List of contents

1. Introduction 1
 
1.1 Background 1
 
1.2 Analysis of Single Event Experiments 7
 
1.3 Modeling Space and Avionics See Rates 8
 
1.4 Overview of this Book 10
 
1.5 Scope of this Book 11
 
2. Foundations of Single Event Analysis and Prediction 13
 
2.1 Overview of Single Particle Effects 13
 
2.2 Particle Energy Deposition 15
 
2.3 Single Event Environments 18
 
2.4 Charge Collection and Upset 58
 
2.5 Effective Let 60
 
2.6 Charge Collection Volume and the Rectangular Parallelepiped (RPP) 61
 
2.7 Upset Cross Section Curves 62
 
2.8 Critical Charge 62
 
2.9 Upset Sensitivity and Feature Size 67
 
2.10 Cross-Section Concepts 67
 
3. Optimizing Heavy Ion Experiments for Analysis 77
 
3.1 Sample Heavy Ion Data 78
 
3.2 Test Requirements 78
 
3.3 Curve Parameters 80
 
3.4 Angular Steps 85
 
3.5 Stopping Data Accumulation When You Reach the Saturation Cross Section 86
 
3.6 Device Shadowing Effects 88
 
3.7 Choice of Ions 89
 
3.8 Determining the LET in the Device 91
 
3.9 Energy Loss Spread 94
 
3.10 Data Requirements 95
 
3.11 Experimental Statistics and Uncertainties 97
 
3.12 Effect of Dual Thresholds 98
 
3.13 Fitting Cross-Section Data 99
 
3.14 Other Sources of Error and Uncertainties 101
 
4. Optimizing Proton Testing 103
 
4.1 Monitoring the Beam Intensity and Uniformity 103
 
4.2 Total Dose Limitations on Testing 104
 
4.3 Shape of the Cross-Section Curve 105
 
5. Data Qualification and Interpretation 111
 
5.1 Data Characteristics 111
 
5.2 Approaches to Problem Data 121
 
5.3 Interpretation of Heavy Ion Experiments 142
 
5.4 Possible Problems with Least Square Fitting Using the Weibull Function 158
 
6. Analysis of Various Types of SEU Data 165
 
6.1 Critical Charge 165
 
6.2 Depth and Critical Charge 166
 
6.3 Charge Collection Mechanisms 168
 
6.4 Charge Collection and the Cross-Section Curve 170
 
6.5 Efficacy (Variation of SEU Sensitivity within a Cell) 174
 
6.6 Mixed-Mode Simulations 185
 
6.7 Parametric Studies of Device Sensitivity 198
 
6.8 Influence of Ion Species and Energy 215
 
6.9 Device Geometry and the Limiting Cross Section 218
 
6.10 Track Size Effects 220
 
6.11 Cross-Section Curves and the Charge Collection Processes 221
 
6.12 Single Event Multiple-Bit Upset 226
 
Environment 240
 
6.13 SEU in Logic Systems 246
 
6.14 Transient Pulses 249
 
7. Cosmic Ray Single Event Rate Calculations 251
 
7.1 Introduction to Rate Prediction Methods 252
 
7.2 The RPP Approach to Heavy Ion Upset Rates 252
 
7.3 The Integral RPP Approach 260
 
7.4 Shape of the Cross-Section Curve 264
 
7.5 Assumptions Behind the RPP and IRPP Methods 270
 
7.6 Effective Flux Approach 285
 
7.7 Upper Bound Approaches 287
 
7.8 Figure of Merit Upset Rate Equations 288
 
7.9 Generalized Figure of Merit 290
 
7.10 The FOM and the LOG Normal Distribution 299
 
7.11 Monte Carlo Approaches 300
 
7.12 PRIVIT 302
 
7.13 Integral Flux Method 302
 
8. Proton Single Event Rate Calculations 305
 
8.1 Nuclear Reaction Analysis 306
 
8.2 Semiempirical Approaches and the Integral Cross-Section Calculation 313
 
8.3 Relationship of Proton and Heavy Ion Upsets 316
 
8.4 Correlation of the FOM with Proton Upset Cross Sections 317
 

Product details

• Authors: Petersen, E Petersen, Edward Petersen, Petersen Edward
• Publisher: Wiley, John and Sons Ltd
• Languages: English
• Product format: Hardback
• Released: 18.11.2011
• EAN: 9780470767498
• ISBN: 978-0-470-76749-8
• No. of pages: 520
• Subjects: Natural sciences, medicine, IT, technology > Technology > Electronics, electrical engineering, communications engineering; Maschinenbau, Halbleiter, Luftfahrttechnik, Mechanical Engineering, Semiconductors, Electrical & Electronics Engineering, Elektrotechnik u. Elektronik, Aeronautic & Aerospace Engineering, Luft- u. Raumfahrttechnik, Components & Devices, Komponenten u. Bauelemente