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Informationen zum Autor Dr. Peter Capper is a Materials Team Leader at BAE Systems Infrared Ltd., in Southampton, UK. James Garland is the editor of Mercury Cadmium Telluride: Growth, Properties and Applications , published by Wiley. Klappentext Mercury cadmium telluride (MCT) is the third most well-regarded semiconductor after silicon and gallium arsenide and is the material of choice for use in infrared sensing and imaging. The reason for this is that MCT can be 'tuned' to the desired IR wavelength by varying the cadmium concentration. Mercury Cadmium Telluride: Growth, Properties and Applications provides both an introduction for newcomers, and a comprehensive review of this fascinating material. Part One discusses the history and current status of both bulk and epitaxial growth techniques, Part Two is concerned with the wide range of properties of MCT, and Part Three covers the various device types that have been developed using MCT. Each chapter opens with some historical background and theory before presenting current research. Coverage includes: Bulk growth and properties of MCT and CdZnTe for MCT epitaxial growth Liquid phase epitaxy (LPE) growth Metal-organic vapour phase epitaxy (MOVPE) Molecular beam epitaxy (MBE) Alternative substrates Mechanical, thermal and optical properties of MCT Defects, diffusion, doping and annealing Dry device processing Photoconductive and photovoltaic detectors Avalanche photodiode detectors Room-temperature IR detectors Zusammenfassung Mercury Cadmium Telluride delivers a comprehensive treatment of both the growth techniques and fundamental properties of mercury cadmium telluride (MCT). Inhaltsverzeichnis Series Preface Preface Foreword List of Contributors Part One - Growth 1 Bulk Growth of Mercury Cadmium Telluride (MCT) P. Capper 1.1 Introduction 1.2 Phase Equilibria 1.3 Crystal Growth 1.4 Conclusions References 2 Bulk growth of CdZnTe/CdTe crystals A. Noda, H. Kurita and R. Hirano 2.1 Introduction 2.2 High-purity Cd and Te 2.3 Crystal Growth 2.4 Wafer processing 2.5 Summary Acknowledgements References 3 Properties of Cd(Zn)Te (relevant to use as substrates) S. Adachi 3.1 Introduction 3.2 Structural Properties 3.3 Thermal Properties 3.4 Mechanical and Lattice Vibronic Properties 3.5 Collective Effects and Some Response Characteristics 3.6 Electronic Energy-band Structure 3.7 Optical Properties 3.8 Carrier Transport Properties References 4 Substrates for the Epitaxial growth of MCT J. Garland and R. Sporken 4.1 Introduction 4.2 Substrate Orientation 4.3 CZT Substrates 4.4 Si-based Substrates 4.5 Other Substrates 4.6 Summary and Comclusions References 5 Liquid phase epitaxy of MCT P. Capper 5.1 Introduction 5.2 Growth 5.3 Material Characteristics 5.4 Device Status 5.5 Summary and Future Developments References 6 Metal-Organic Vapor Phase Epitaxy (MOVPE) Growth C. M. Maxey 6.1 Requirement for Epitaxy 6.2 History 6.3 Substrate Choices 6.4 Reactor Design 6.5 Process Parameters 6.6 Metalorganic Sources 6.7 Uniformity 6.8 Reproducibility 6.9 Doping 6.10 Defects 6.11 Annealing 6.12 In-situ monitoring 6.13 Conclusions References 7 MBE growth of Mercury Cadmium Telluride J. Garland 7.1 Introduction 7.2 MBE Growth theory and Growth Modes 7.3 Substrate Mounting 7.4 In-situ Characterization Tools 7.5 MCT Nucleation and Growth 7.6 Dopants and Dopant Activation 7.7 Properties of...
