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Handbook of Gan Semiconductor Materials and Devices

Inglese · Tascabile

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This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It covers the basics of semiconductor materials, physics, growth and characterization techniques.


Info autore

Wayne Bi is distinguished chair professor and associate dean in the College of Information and Electrical Engineering, chief scientist in the State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin, China. He earned his PhD in Applied Physics from the University of California, San Diego. He has worked in industry for over two decades including at Hewlett-Packard Laboratory, Agilent Technologies Laboratory, and Philips Lumileds, developing cutting-edge optoelectronic and photonic materials and device structures by molecular beam epitaxy (MBE) and metal organic vapor phase epitaxy (MOVPE) with their applications to optoelectronic and electronic devices. Previously he was chief engineer and Vice President of Najing Technology / NNCrystal. Dr. Bi has authored or co-authored over 60 refereed journal publications, and has presented numerous conference talks and is the inventor of twenty patents. He is an elected fellow of the Optical Society of America (OSA).

Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan. He earned his doctorate in the Department of Electrical and Computer Engineering at the University of Illinois at Champaign Urbana. He has supervised over forty PhD and Master’s level scientists and engineers and also has extensive industry experience, including at Bell Labs, Lucent Technologies, Agilent Technologies, and LuxNet Corporation. He has worked in the field of III-V optical devices and materials, solid state lighting process development, and fabrication and measurement of quantum devices. He is an associate editor of the IEEE Journal of Selected Topics in Quantum Electronics and Journal of Lightwave Technology. He has published over 300 papers in peer-reviewed journals, and is an elected fellow of SPIE, the Optical Society of America (OSA), the Institutio

Riassunto

This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It covers the basics of semiconductor materials, physics, growth and characterization techniques.

Dettagli sul prodotto

Con la collaborazione di Wengang (Wayne) Bi (Editore), Haochung (Henry) Kuo (Editore), Peicheng Ku (Editore), Bo Shen (Editore), Hao-chung (Henry) Kuo (Editore), Pei-Cheng Ku (Editore), Haochung (National Chiao-Tung University Kuo (Editore), Wengang (Hebei University of Technology Bi (Editore), Haochung Kuo (Editore), Wengang Bi (Editore), Shen Bo (Editore)
Autori Wengang (Wayne) Kuo Bi, Wengang (Wayne) (Hebei University of Technolog Bi
Editore Taylor & Francis Ltd.
 
Contenuto Libro
Forma del prodotto Tascabile
Data pubblicazione 31.12.2019
Categoria Scienze naturali, medicina, informatica, tecnica > Tecnica > Elettronica, elettrotecnica, telecomunicazioni
 
EAN 9780367875312
ISBN 978-0-367-87531-2
Numero di pagine 708
 
Serie Series in Optics and Optoelectronics
Categorie Lee, TECHNOLOGY & ENGINEERING / Lasers & Photonics, Materials science, TECHNOLOGY & ENGINEERING / Materials Science / General, Electronic devices and materials, EBL, Semi-conductors & super-conductors, Molecular beam epitaxy, photodetector technology, Field Effect Transistor, GaN Film, optoelectronic device fabrication, quantum efficiency analysis, ultraviolet LED development, advanced nitride device applications, III-nitride semiconductors, Auger recombination, White Lead, Sapphire Substrate, GaN Substrate, GaN Buffer, Threading dislocation, Efficiency droop, Field Plate, Piezoelectric Polarization, InGaN Quantum Wells, Bulk AlN, GaN Interface, GaN QD, AlN Crystal, Bulk GaN, GaN Buffer Layer, In-rich InGaN
 

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