Strain-Induced Effects in Advanced MOSFETs

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.

Summary

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.

Product details

• Authors: Viktor Sverdlov
• Publisher: Springer, Wien
• Content: Book
• Product form: Paperback / Softback
• Publication date: 01.01.2016
• Subject: Natural sciences, medicine, IT, technology > Technology > Electronics, electrical engineering, communication
• EAN: 9783709119334
• ISBN: 978-3-7091-1933-4
• Pages: 252
• Illustrations: XIV, 252 p.
• Dimensions (packing): 16.7 x 23.9 x 1.4 cm
• Weight (packing): 459 g
• Series: Computational Microelectronics; Computational Microelectronics
• Subjects: B, engineering, Electronics, Microelectronics, Electronics and Microelectronics, Instrumentation, semiconductor devices;strain technique;transport modeling