Quantum Wells, Wires and Dots - Theoretical and Computational Physics of Semiconductor Nanostructures

Klappentext As with the successful 2nd edition, Quantum Wells, Wires and Dots - 3rd Edition is aimed at providing all the essential information, both theoretical and computational, in order that the reader can, starting from essentially nothing, understand how the electronic, optical and transport properties of semiconductor heterostructures are calculated.This text is designed to lead the reader through a series of simple theoretical and computational implementations, and slowly build from solid foundations, to a level where the reader can begin to initiate theoretical investigations or explanations of their own.The author has completely reviewed and revised the text to bring it up-to-date. New material contributing an additional 20% to this third edition includes chapters covering the following topics:* Electron Transport* Quantum dots* Optical waveguides* Optical properties of Quantum WellsAimed at postgraduate students of semiconductor and condensed matter physics, the book is essential to all those researching in academic and industrial laboratories worldwide. Inhaltsverzeichnis PrefaceAcknowledgementsAbout the author(s)About the bookIntroduction1 Semiconductors and heterostructures1.1 The mechanics of waves1.2 Crystal structure1.3 The effective mass approximation1.4 Band theory1.5 Heterojunctions1.6 Heterostructures1.7 The envelope function approximation1.8 The reciprocal lattice2 Solutions to Schrödinger's equation2.1 The infinite well2.2 In-plane dispersion2.3 Density of states2.4 Subband populations2.5 Finite well with constant mass2.6 Effective mass mismatch at heterojunctions2.7 The infinite barrier height and mass limits2.8 Hermiticity and the kinetic energy operator2.9 Alternative kinetic energy operators2.10 Extension to multiple-well systems2.11 The asymmetric single quantum well2.12 Addition of an electric field2.13 The infinite superlattice2.14 The single barrier2.15 The double barrier2.16 Extension to include electric field2.17 Magnetic fields and Landau quantisation2.18 In summary3 Numerical solutions3.1 Shooting method3.2 Generalised initial conditions3.3 Practical implementation of the shooting method3.4 Heterojunction boundary conditions3.5 The parabolic potential well3.6 The Pöschl-Teller potential hole3.7 Convergence tests3.8 Extension to variable effective mass3.9 The double quantum well3.10 Multiple quantum wells and finite superlattices3.11 Addition of electric field3.12 Quantum confined Stark effect3.13 Field-induced anti-crossings3.14 Symmetry and selection rules3.15 The Heisenberg uncertainty principle3.16 Extension to include band non-parabolicity3.17 Poisson's equation3.18 Self-consistent Schrödinger-Poisson solution3.19 Computational implementation3.20 Modulation doping3.21 The high-electron-mobility transistor3.22 Band filling4 Diffusion4.1 Introduction4.2 Theory4.3 Boundary conditions4.4 Convergence tests4.5 Constant diffusion coefficients4.6 Concentration dependent diffusion coefficient4.7 Depth dependent diffusion coefficient4.8 Time dependent diffusion coefficient4.9 !-doped quantum wells4.10 Extension to higher dimensions5 Impurities5.1 Donors and acceptors in bulk material5.2 Binding energy in a heterostructure5.3 Two-dimensional trial wave function5.4 Three-dimensional trial wave function5.5 Variable-symmetry trial wave function5.6 Inclusion of a central cell correction5.7 Special considerations for acceptors5.8 Effective mass and dielectric mismatch5.9 Band non-parabolicity5.10 Excited states5.11 Application to spin-flip Raman spectroscopy5.12 Alternative approach to excited impurity states5.13 The ground state5.14 Position dependence5.15 Excited States5.16 Impurity occupancy statistics6 Excitons6.1 Excitons in bulk6.2 Excitons in heterostru...

Sommario

Preface

Acknowledgements

About the author(s)

About the book

Introduction

1 Semiconductors and heterostructures

1.1 The mechanics of waves

1.2 Crystal structure

1.3 The effective mass approximation

1.4 Band theory

1.5 Heterojunctions

1.6 Heterostructures

1.7 The envelope function approximation

1.8 The reciprocal lattice

2 Solutions to Schrödinger's equation

2.1 The infinite well

2.2 In-plane dispersion

2.3 Density of states

2.4 Subband populations

2.5 Finite well with constant mass

2.6 Effective mass mismatch at heterojunctions

2.7 The infinite barrier height and mass limits

2.8 Hermiticity and the kinetic energy operator

2.9 Alternative kinetic energy operators

2.10 Extension to multiple-well systems

2.11 The asymmetric single quantum well

2.12 Addition of an electric field

2.13 The infinite superlattice

2.14 The single barrier

2.15 The double barrier

2.16 Extension to include electric field

2.17 Magnetic fields and Landau quantisation

2.18 In summary

3 Numerical solutions

3.1 Shooting method

3.2 Generalised initial conditions

3.3 Practical implementation of the shooting method

3.4 Heterojunction boundary conditions

3.5 The parabolic potential well

3.6 The Pöschl-Teller potential hole

3.7 Convergence tests

3.8 Extension to variable effective mass

3.9 The double quantum well

3.10 Multiple quantum wells and finite superlattices

3.11 Addition of electric field

3.12 Quantum confined Stark effect

3.13 Field-induced anti-crossings

3.14 Symmetry and selection rules

3.15 The Heisenberg uncertainty principle

3.16 Extension to include band non-parabolicity

3.17 Poisson's equation

3.18 Self-consistent Schrödinger-Poisson solution

3.19 Computational implementation

3.20 Modulation doping

3.21 The high-electron-mobility transistor

3.22 Band filling

4 Diffusion

4.1 Introduction

4.2 Theory

4.3 Boundary conditions

4.4 Convergence tests

4.5 Constant diffusion coefficients

4.6 Concentration dependent diffusion coefficient

4.7 Depth dependent diffusion coefficient

4.8 Time dependent diffusion coefficient

4.9 !-doped quantum wells

4.10 Extension to higher dimensions

5 Impurities

5.1 Donors and acceptors in bulk material

5.2 Binding energy in a heterostructure

5.3 Two-dimensional trial wave function

5.4 Three-dimensional trial wave function

5.5 Variable-symmetry trial wave function5.6 Inclusion of a central cell correction

5.7 Special considerations for acceptors

5.8 Effective mass and dielectric mismatch

5.9 Band non-parabolicity

5.10 Excited states

5.11 Application to spin-flip Raman spectroscopy

5.12 Alternative approach to excited impurity states

5.13 The ground state

5.14 Position dependence

5.15 Excited States

5.16 Impurity occupancy statistics

6 Excitons

6.1 Excitons in bulk

6.2 Excitons in heterostructures

6.3 Exciton binding energies

6.4 1s exciton

6.5 The two-dimensional and three-dimensional limits

6.6 Excitons in single quantum wells

6.7 Excitons in multiple quantum wells

6.8 Stark Ladders

6.9 Self-consistent effects

6.10 Spontaneous symmetry breaking

6.11 2s exciton

7 Strained quantum wells, V. D. Jovanovíc

7.1 Stress and strain in bulk crystals

7.2 Strain in quantum wells

7.3 Strain balancing

7.4 Effect on the band profile of quantum wells

7.5 The piezoelectric effect

7.6 Induced piezoelectric fields in quantum wells

7.7 Effect of piezoelectric fields on quantum wells

8 Simple models of quantum wires and dots

8.1 Further confinement

8.2 Schrödinger's equation in quantum wires

8.3 Infinitely deep rectangular wires

8.4 Simple approximation to a finite rectangular wire

8.5 Circular cross-section wire

8.6 Quantum boxes

8.7 Spherical quantum dots

8.8 Non-zero angular momentum states

8.9 Approaches to pyra

Dettagli sul prodotto

• Autori: Paul Harrison, Harrison Paul
• Editore: Wiley, John and Sons Ltd
• Lingue: Inglese
• Formato: Copertina rigida
• Pubblicazione: 18.12.2009
• EAN: 9780470770986
• ISBN: 978-0-470-77098-6
• Pagine: 564
• Categoria: Scienze naturali, medicina, informatica, tecnica > Fisica, astronomia > Fisica atomica, fisica nucleare