Nitride Semiconductor Doped with Transition Metal

In this work, we present a theoretical study of structural, electronic, magnetic and optical properties for zinc-blende :Ga1-xT MxN,Al1-xT MxN and In1-xT MxN(TM=Cr, Fe, Mn, V) using the full-potential augmented plane wave (FP-APW) method with local spin density approximation (LSDA). We have analysed the dependence of structural parameters values on the composition x in the range of x=0.125,x=0.25, x=0.50,x=0.75, we found existence of deviation from Vegard's law. Our calculations also verify the half-metallic ferromagnetic character of TM doped GaN, AlN and InN. Also, the role of p-d hybridization is analyzed by partial (PDOS) and total density of stat (TDOS).

A propos de l'auteur

Dr Fethallah DAHMANE is a Professor of Physics in university of Tissemsilt. He Received PhD from Sidi Bel Abbes University in 2014. His main scientific work is focused on the structural, electronic and, magnetic properties of crystalline materials using Density functional theory (DFT) as implemented in WIEN2K packages.

Détails du produit

• Auteurs: Fethalla Dahmane, Abdelkade Tadjer, Bendo Doumi, Abdelkader Tadjer, Bendouma Doumi, Fethallah Dahmane
• Edition: LAP Lambert Academic Publishing
• Contenu: Livre
• Forme du produit: Livre de poche
• Date de parution: 27.08.2018
• Catégorie: Sciences naturelles, médecine, it, technique > Physique, astronomie > Electricité, magnétisme, optique
• EAN: 9783659511189
• ISBN: 978-3-659-51118-9
• Nombre de pages: 156
• Dimensions (emballage): 15 x 22 x 0,9 cm
• Poids (emballage): 251 g